low noise amplifiers - chip 1 1 - 78 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc564 gaas phemt mmic low noise amplifier, 7 - 13.5 ghz v00.0206 general description features functional diagram the hmc564 is a high dynamic range gaas phemt mmic low noise amplifi er (lna) chip which operates from 7 to 13.5 ghz. the hmc564 features extremely fl at performance characteristics including 17 db of small signal gain, 1.8 db of noise fi gure and output ip3 of 24 dbm across the operating band. this self- biased lna is ideal for hybrid and mcm assemblies due to its compact size, consistent output power, single +3v supply operation, and dc blocked rf i/os. all data is measured with the chip in a 50 ohm test fi xture connected via two 0.025 mm (1 mil) diameter bondwires of minimal length 0.31 mm (12 mil). noise figure: 1.8 db gain: 17 db oip3: 24 dbm single supply: +3v @ 51 ma 50 ohm matched input/output small size: 1.96 x 0.98 x 0.10 mm electrical specifi cations, t a = +25 c, vdd 1, 2 = +3v typical applications the hmc564 is ideal for use as a lna or driver ampli- fi e r f o r : ? point-to-point radios ? point-to-multi-point radios ? test equipment and sensors ? military & space parameter min. typ. max. units frequency range 7 - 13.5 ghz gain 14 17 db gain variation over temperature 0.02 0.03 db/ c noise figure 1.8 2.2 db input return loss 15 db output return loss 16 db output power for 1 db compression (p1db) 9 12 dbm saturated output power (psat) 14.5 dbm output third order intercept (ip3) 24 dbm supply current (idd)(vdd = +3v) 51 ma
low noise amplifiers - chip 1 1 - 79 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature noise figure vs. temperature -25 -20 -15 -10 -5 0 5 10 15 20 25 67891011121314 s21 s11 s22 response (db) frequency (ghz) hmc564 gaas phemt mmic low noise amplifier, 7 - 13.5 ghz v00.0206 -25 -20 -15 -10 -5 0 67891011121314 +25c +85c -55c return loss (db) frequency (ghz) 0 1 2 3 4 5 6 67891011121314 +25c +85c -55c noise figure (db) frequency (ghz) -25 -20 -15 -10 -5 0 67891011121314 +25c +85c -55c return loss (db) frequency (ghz) 0 5 10 15 20 25 67891011121314 +25c +85c -55c gain (db) frequency (ghz) reverse isolation vs. temperature -50 -40 -30 -20 -10 0 67891011121314 +25c +85c -55c isolation (db) frequency (ghz)
low noise amplifiers - chip 1 1 - 80 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com p1db vs. temperature power compression @ 8 ghz psat vs. temperature gain, noise figure & power vs. supply voltage @ 8 ghz 0 4 8 12 16 20 67891011121314 +25c +85c -55c p1db (dbm) frequency (ghz) hmc564 gaas phemt mmic low noise amplifier, 7 - 13.5 ghz v00.0206 0 5 10 15 20 -15 -10 -5 0 pout gain pae pout (dbm), gain (db), pae(%) input power (dbm) 0 4 8 12 16 20 0 2 4 6 8 10 2.5 3 3.5 gain (db), p1db (dbm) noise figure (db) vdd ( vdc ) gain p1db noise figure 0 4 8 12 16 20 67891011121314 +25c +85c -55c psat (dbm) frequency (ghz) output ip3 vs. temperature 5 10 15 20 25 30 35 67891011121314 +25c +85c -55c oip3 (dbm) frequency (ghz)
low noise amplifiers - chip 1 1 - 81 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing absolute maximum ratings drain bias voltage (vdd1, vdd2) +3.5 vdc rf input power (rfin)(vdd = +3.0 vdc) +5 dbm channel temperature 175 c continuous pdiss (t= 85 c) (derate 12.97 mw/c above 85 c) 1.17 w thermal resistance (channel to die bottom) 77 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c vdd (vdc) idd (ma) +2.5 49 +3.0 51 +3.5 53 typical supply current vs. vdd note: amplifi er will operate over full voltage ranges shown above. notes: 1. all dimensions are in inches [mm] 2. die thickness is .004 3. typical bond is .004 square 4. backside metallization: gold 5. bond pad metallization: gold 6. backside metal is ground. 7. connection not required for unlabeled bond pads. electrostatic sensitive device observe handling precautions die packaging information [1] standard alternate gp-2 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. hmc564 gaas phemt mmic low noise amplifier, 7 - 13.5 ghz v00.0206
low noise amplifiers - chip 1 1 - 82 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad descriptions pad number function description interface schematic 1in this pad is ac coupled and matched to 50 ohms from 7 - 13.5 ghz. 2, 3 vdd1, 2 power supply voltage for the amplifi er. external bypass capacitors of 100 pf and 0.1 f are required. 4out this pad is ac coupled and matched to 50 ohms from 7 - 13.5 ghz. die bottom gnd die bottom must be connected to rf/dc ground. assembly diagram hmc564 gaas phemt mmic low noise amplifier, 7 - 13.5 ghz v00.0206
low noise amplifiers - chip 1 1 - 83 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm (3 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against > 250v esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fl a t . eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated o n the package or substrate. all bonds should be as short as possible <0.31 mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc564 gaas phemt mmic low noise amplifier, 7 - 13.5 ghz v00.0206
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